SCOPUS 정보 검색 플랫폼

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 45, Issue 46-50, 2006, Pages

Improvements in electrical characteristics of plasma enhanced chemical vapor deposition-tetraethylorthosilicate-SiO2 by atomic hydrogen passivation via hot-wire technique

(2) Lim, Cheolhyun a Hanna, Junichi a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

Atomic hydrogen passivation; Electrical characteristics; Hot wire; Low temperature; SiO2; TEOS

Indexed keywords

CHARGE DENSITY; HYDROGEN; INTERFACES (MATERIALS); PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

ATOMIC HYDROGEN PASSIVATION; ELECTRICAL CHARACTERISTICS; TETRAETHOXYORTHOSILICATE;

SILICA;

EID: 34547924481 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.45.L1270 Document Type: Article

Times cited : (3)

References (17)

1
- 36849130064
- R. A. Weeks: J. Appl. Phys. 27 (1956) 1376.
- (1956) J. Appl. Phys , vol.27 , pp. 1376
- Weeks, R.A.¹

2
- 0003032815
- Y. Nishi: Jpn. J. Appl. Phys. 5 (1966) 333.
- (1966) Jpn. J. Appl. Phys , vol.5 , pp. 333
- Nishi, Y.¹

3
- 0000953056
- M. L. Reed and J. D. Plummer: J. Appl. Phys. 63 (1988) 5776.
- (1988) J. Appl. Phys , vol.63 , pp. 5776
- Reed, M.L.¹ Plummer, J.D.²

4
- 0032297914
- T. Sameshima, K. Sakamoto, Y. Tsunoda and T. Saitoh: Jpn. J. Appl. Phys. 37 (1998) L1452.
- (1998) Jpn. J. Appl. Phys , vol.37
- Sameshima, T.¹ Sakamoto, K.² Tsunoda, Y.³ Saitoh, T.⁴

5
- 0346329764
- H. Jhang, A. Kumagai, G. Xu and K. Ishibashi: Jpn. J. Appl. Phys. 42 (2003) 6252.
- (2003) Jpn. J. Appl. Phys , vol.42 , pp. 6252
- Jhang, H.¹ Kumagai, A.² Xu, G.³ Ishibashi, K.⁴

6
- 0033531803
- A. Ikeda, T. Sadou, H. Nagashima, K. Kouno, N. Yoshikawa, K. Tshukamoto and Y. Kuroki: Thin Solid Films 345 (1999) 172.
- (1999) Thin Solid Films , vol.345 , pp. 172
- Ikeda, A.¹ Sadou, T.² Nagashima, H.³ Kouno, K.⁴ Yoshikawa, N.⁵ Tshukamoto, K.⁶ Kuroki, Y.⁷

7
- 0039297455
- H. Nagayoshi, Y. Onozawa, M. Ikeda, M. Yamaguchi, Y. Yamamoto, T. Uematsu, T. Saitoh and K. Kamisako: Jpn. J. Appl. Phys. 35 (1996) L1047.
- (1996) Jpn. J. Appl. Phys , vol.35
- Nagayoshi, H.¹ Onozawa, Y.² Ikeda, M.³ Yamaguchi, M.⁴ Yamamoto, Y.⁵ Uematsu, T.⁶ Saitoh, T.⁷ Kamisako, K.⁸

8
- 0030394556
- A. Szekeres and S. Alexandrova: Vacuum 47 (1996) 1483.
- (1996) Vacuum , vol.47 , pp. 1483
- Szekeres, A.¹ Alexandrova, S.²

9
- 0034187781
- N. H. Nickel: J. Vac. Sci. Technol. B 18 (2000) 1770.
- (2000) J. Vac. Sci. Technol. B , vol.18 , pp. 1770
- Nickel, N.H.¹

10
- 0343316980
- J. E. Shelby: J. Appl. Phys. 48 (1977) 2287.
- (1977) J. Appl. Phys , vol.48 , pp. 2287
- Shelby, J.E.¹

11
- 34547858859
- H. Matsumura, H. Umemoto and A. Masuda: J. Non-Cryst. Solids 19 (2004) 338.
- (2004) J. Non-Cryst. Solids , vol.19 , pp. 338
- Matsumura, H.¹ Umemoto, H.² Masuda, A.³

12
- 0036539810
- J. Zhang, K. Shimizu and J. Hanna: J. Non-Cryst. Solids 299 (2002) 163.
- (2002) J. Non-Cryst. Solids , vol.299 , pp. 163
- Zhang, J.¹ Shimizu, K.² Hanna, J.³

13
- 0036914349
- J. Lee, K. Shimizu and J. Hanna: Mater. Res. Soc. Symp. 715 (2002) 77.
- (2002) Mater. Res. Soc. Symp , vol.715 , pp. 77
- Lee, J.¹ Shimizu, K.² Hanna, J.³

14
- 0004071496
- Wiley, New York, 2nd ed
- D. K. Schroder: Semiconductor Material and Device Characterization (Wiley, New York, 1998) 2nd ed.
- (1998) Semiconductor Material and Device Characterization
- Schroder, D.K.¹

15
- 0036881301
- Y. Nakata, T. Okamoto, T. Hamada, T. Itoga and Y. Ishii: IEICE Trans. Electron. E85-C (2002) 1849.
- (2002) IEICE Trans. Electron , vol.E85-C , pp. 1849
- Nakata, Y.¹ Okamoto, T.² Hamada, T.³ Itoga, T.⁴ Ishii, Y.⁵

16
- 0033751150
- C. Viana, N. Morimoto and O. Bonnaud: Microelectron. Reliab. 40 (2000) 613.
- (2000) Microelectron. Reliab , vol.40 , pp. 613
- Viana, C.¹ Morimoto, N.² Bonnaud, O.³

17
- 2342538316
- Buffalo, NY
- P. Balk: Proc. Electrochemical Society Fall Meeting, Buffalo, NY, 1965.
- (1965) Proc. Electrochemical Society Fall Meeting
- Balk, P.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.