Low-temperature treatment of Si/SiO2 structures in an RF hydrogen plasma

Vacuum

Volumn 47, Issue 12, 1996, Pages 1483-1486

  Szekeres, A ^a   Alexandrova, S ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; HYDROGEN; INTERFACES (MATERIALS); MOS DEVICES; OXIDATION; PLASMAS; RADIATION DAMAGE; SEMICONDUCTING SILICON; SILICA; THERMAL EFFECTS;

FIXED POSITIVE OXIDE; POSTOXIDATION DEFECTS; RADIOFREQUENCY HYDROGEN PLASMA;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0030394556     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(96)00175-3     Document Type: Article

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