Low-temperature gate insulator for poly-Si thin film transistors by combination of photo-oxidation and plasma enhanced chemical vapor deposition using tetraethylorthosilicate and O2 gases

IEICE Transactions on Electronics

Volumn E85-C, Issue 11, 2002, Pages 1849-1853

  Nakata, Yukihiko ^a   Okamoto, Tetsuya ^a   Hamada, Toshimasa ^a   Itoga, Takashi ^a   Ishii, Yutaka ^a  

^a SHARP CORPORATION   (Japan)

Author keywords

Gate insulator; Oxidation; Poly Si; SiO2; TFT

Indexed keywords

ANNEALING; GATES (TRANSISTOR); INTERFACES (MATERIALS); ION BOMBARDMENT; LOW TEMPERATURE EFFECTS; OXIDATION; OXYGEN; PHOTOOXIDATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYSILICON; SILICA;

GATE INSULATORS;

THIN FILM TRANSISTORS;

EID: 0036881301     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (8)

1. 2 deposited at 300°C by remote plasma technique," Jpn. J. Appl. Phys., vol.33, pp.440-443, 1994.
2. T. Ueno, A. Morioka, S. Chikamura, and Y. Iwasaki, "Low-temperature and low-activation-energy process for the gate oxidation of Si substrates," Jpn. J. Appl. Phys., vol.39, pp. L327-L329, 2000.
3. M. Hirayama, K. Sekine, Y. Saito, and T. Ohmi, "Low-temperature growth of high-integrity silicon oxide films by oxigen radical generated in high-density krypton plasma," IEDM Tech. Dig., p.249, 1999.
4. I.W. Boyd and J.I.B. Wilson, Thin Solid Films, vol.83, p.L173, 1981.
5. V. Nayar, I.W. Boyd, F.N. Goodall, and C. Arthur, Appl. Surf. Sci., vol.36, p.134, 1989.
6. I.W. Boyd, J. Appl. Phys., vol.54, p.3561, 1983.
7. J.Y. Zhang and I.W. Boyd, "Low temperature photo-oxidation of silicon using a xenon eximer lamp," Appl. Phys. Lett., vol.71, pp.2964-2966, 1997.
8. H. Okabe, Photochemistry of Small Molecules, pp.178-239, John Wiley & Sons, New York, 1978.