Fabrication and characterization of polycrystalline silicon thin films by reactive thermal CVD with Si2H6 and F2

Materials Research Society Symposium - Proceedings

Volumn 715, Issue , 2002, Pages 77-82

  Lee, J W ^a   Shimizu, K ^a   Hanna, J ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; FILM GROWTH; FLUORINE COMPOUNDS; HYDROGENATION; POLYCRYSTALLINE MATERIALS; RAMAN SPECTROSCOPY; SILANES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

CARRIER GAS; CRYSTALLINITY; GROWTH RATE; POLYCRYSTALLINE SILICON THIN FILMS;

SILICON;

EID: 0036914349     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-715-a16.1     Document Type: Conference Paper

References (9)

1. W.C.Omara, Liquid Crystal Displays, Manufacturing Science and Technology (Van Nostrand and Reinhold, New York 1993)
2. T. Hamasaki, H. Kurata, M. Hirose, and Y. Osaka, Appl. Phys. Lett., 37, (1980) 1084
3. S. Nishida, H Tasaki, M. Konagai, and K. Takahashi, J. Appl. Phys., 58, (1985) 1427
4. H. Matsumura, Jpn. J. Appl. Phys., 30, (1991) L1522
5. J. Hanna, A. Kamo, T. Komiya, I. Shimizu, and H. Kokado, J. Non-cryst. Solids, 114, (1989) 172-174
6. M. Yamamoto, M. Miyauchi, and J. Hanna, Appl. Phys. Lett., 63, (1993) 641
7. J. Hanna, T. Ohuchi, M. Yamamoto, J. Non-cryst. Solids, 198-200, (1996) 879-882
8. K. Shimizu, J. Zhang, J.W. Lee, J. Hanna, Mat. Res. Soc., Symp. Proc., 638 (2001) F14.13.1
9. T. Nagahara, K.Fujimoto, N.Kohno, Y.Kashiwagi, and H.Kakinoki, Jpn.J.Appl.Phys., 31 (1992) 4555