Low-Temperature Atomic Hydrogen Treatment of SiO2/Si Structures

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 10, 2003, Pages 6252-6255

  Zhang, Hong ^a   Kumagai, Akira ^a   Xu, Ge ^a   Ishibashi, Keiji ^a  

^a ANELVA Corporation ^*  (Japan)

Author keywords

Atomic hydrogen treatment; Electrical properties; MOS capacitor

Indexed keywords

DEFECTS; ELECTRIC CURRENTS; HYDROGEN; INTERFACES (MATERIALS); OXIDATION; SILICA; TUNGSTEN; WIRE;

CHARGE DENSITY; PROCESS CHAMBERS;

MOS CAPACITORS;

EID: 0346329764     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.6252     Document Type: Article

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