Low temperature poly-SixGe1-x deposited by reactive thermal CVD for thin film transistor application

Journal of Non-Crystalline Solids

Volumn 299-302, Issue PART 1, 2002, Pages 163-167

  Zhang, J J ^a   Shimizu, K ^a   Hanna, J ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; FILM PREPARATION; GATES (TRANSISTOR); GRAIN SIZE AND SHAPE; HYDROGENATION; POLYSILICON; SEMICONDUCTOR JUNCTIONS; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE;

REACTIVE THERMAL CHEMICAL VAPOR DEPOSITION (RTCVD);

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0036539810     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(01)01196-6     Document Type: Conference Paper

References (17)