Annealing effects in the PECVD SiO2 thin films deposited using TEOS, Ar and O2 mixture

Microelectronics Reliability

Volumn 40, Issue 4-5, 2000, Pages 613-616

  Viana, C E ^a   Morimoto, N I ^a   Bonnaud, O ^b  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

^b UNIVERSITÉ DE RENNES 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARGON; ELECTRIC BREAKDOWN OF SOLIDS; MIXTURES; MOS CAPACITORS; OXYGEN; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SILICA; THIN FILMS;

TETRAETHYLORTHOSILICATES;

SEMICONDUCTING FILMS;

EID: 0033751150     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2714(99)00288-7     Document Type: Article

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