Effect of hydrogen-radical annealing for SiO2 passivation

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 8 SUPPL. B, 1996, Pages

  Nagayoshi, Hiroshi ^a   Onozawa, Yuichi ^a   Ikeda, Makoto ^a   Yamaguchi, Misako ^a   Yamamoto, Yuichi ^a   Uematsu, Tsuyoshi ^b   Saitoh, Tadashi ^a   Kamisako, Koichi ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^b HITACHI LTD   (Japan)

Author keywords

Annealing; Hydrogen radical; Interface state density; Passivation; SiO2; Solar cell; Surface recombination velocity

Indexed keywords

EID: 0039297455     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l1047     Document Type: Article

References (4)

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3. M. Yamaguchi, H. Nagayoshi, M. Ikeda, Y. Yamamoto, K. Kamisako and Y. Tarui: Jpn. J. Appl. Phys. 34 (1995) 791.
4. T. Uematsu, Y. Nagata, T. Ohtsuka, T. Warabisako, H. Nomura, T. Iga and T. Saitoh: Conf. Record of 23nd IEEE Photovoltaic Specialists Conference, Luisville (IEEE, New York, 1993) p. 352.