Effects of surface defects on the performance of 4H- and 6H-SiC pn junction diodes

Materials Science and Engineering B

Volumn 61-62, Issue , 1999, Pages 349-352

  Kimoto, Tsunenobu ^a   Miyamoto, Nao ^a   Matsunami, Hiroyuki ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Carrier lifetime; Perimeter generation; Pn diode; Silicon carbide; Surface recombination

Indexed keywords

CRYSTAL DEFECTS; LEAKAGE CURRENTS; MORPHOLOGY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE;

CARRIER LIFETIME; SURFACE RECOMBINATION;

SEMICONDUCTOR DIODES;

EID: 0007642736     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00532-7     Document Type: Article

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