Correspondence between surface morphological faults and crystallographic defects in 4H-SiC homoepitaxial film

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 11, 2002, Pages 6320-6326

  Okada, Tatsuya ^b   Kimoto, Tsunenobu ^a   Noda, Hiroshi ^b   Ebisui, Takahiro ^b   Matsunami, Hiroyuki ^a   Inoko, Fukuji ^b  

^a KYOTO UNIVERSITY   (Japan)

^b NONE

Author keywords

4H SiC; Homoepitaxy; Off cut substrate; Surface morphological fault; Transmission electron microscopy

Indexed keywords

CRYSTALLOGRAPHY; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; MORPHOLOGY; SILICON CARBIDE; STACKING FAULTS; SURFACE PROPERTIES; TRANSMISSION ELECTRON MICROSCOPY;

HOMOEPITAXIAL FILMS;

SEMICONDUCTING FILMS;

EID: 0036873227     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.6320     Document Type: Article

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