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Thin Solid Films

Volumn 469-470, Issue SPEC. ISS., 2004, Pages 460-465

Thermal stability and bonding configuration of fluorine-modified low-k SiOC:H composite films

(5) Jangjian, Shiu Ko a,b Liu, Chuan Pu a Wang, Ying Lang b Hwang, Weng Sing a Tseng, Wei Tsu a,c

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY (Taiwan)

c IBM (United States)

Author keywords

Bonding configuration; F SiOC:H; Thermal stability

Indexed keywords

ANNEALING; BONDING; CURRENT DENSITY; FLUORINE COMPOUNDS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGEN BONDS; LEAKAGE CURRENTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON COMPOUNDS; THERMODYNAMIC STABILITY; X RAY PHOTOELECTRON SPECTROSCOPY;

BONDING CONFIGURATION; F-SIOC:H; FLUORINE INCORPORATION; ORGANOSILICATE GLASS;

THIN FILMS;

EID: 10044261964 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2004.06.192 Document Type: Article

Times cited : (11)

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