Equation for internal quantum efficiency and its temperature dependence of luminescence, and application to inxGa1-xN/GaN multiple quantum wells

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 11, 2006, Pages 8719-8723

  Sasaki, Akio ^a   Shibakawa, Shin Ichiro ^a   Kawakami, Yoichi ^b   Nishizuka, Kohji ^b   Narukawa, Yukio ^c   Mukai, Takashi ^c  

^a OSAKA ELECTRO COMMUNICATION UNIVERSITY   (Japan)

^b KYOTO UNIVERSITY   (Japan)

^c NICHIA CORPORATION   (Japan)

Author keywords

Carrier recombination lifetime; InGaN GaN MQWs; Internal quantum efficiency; Photoluminescence

Indexed keywords

GALLIUM NITRIDE; INTEGRATED OPTICS; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY;

CARRIER RECOMBINATION LIFETIME; INTERFACE QUALITY; INTERNAL QUANTUM EFFICIENCY; STRAIN EFFECTS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 34547886902     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.8719     Document Type: Article

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