Evaluation of the optical properties of epitaxial lateral overgrown gallium nitride on sapphire and the role of optically active metastable defects using cathodoluminescence and photoluminescence spectroscopy

Thin Solid Films

Volumn 473, Issue 2, 2005, Pages 308-314

  Ryan, B J ^a   Lowney, D P ^a,b   Henry, M O ^a   McNally, P J ^a   McGlynn, E ^a   Jacobs, K ^c   Considine, L ^d  

^a DUBLIN CITY UNIVERSITY   (Ireland)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c GHENT UNIVERSITY   (Belgium)

^d THOMAS SWAN AND CO LTD   (United Kingdom)

Author keywords

Cathodoluminescence; Depth profiling; Luminescence; Metastable defects; Optical properties; Photoluminescence; Semiconductors

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL DEFECTS; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTOR DEVICES; SPECTROSCOPIC ANALYSIS; THERMAL EFFECTS;

DEPTH PROFILING; DISLOCATION DENSITY; EPITAXIAL LATERAL OVER-GROWTH (ELOG); METASTABLE DEFECTS;

GALLIUM NITRIDE;

EID: 10644232974     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.08.065     Document Type: Article

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