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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 9 AB, 2004, Pages

The electrical and material properties of HfO xN y dielectric on germanium substrate

(3) Zhang, Qingchun a Wu, Nan a Zhu, Chunxiang a

a NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

Author keywords

Annealing; Deposition; Germanium; Hafnium oxynitride; MOS capacitor

Indexed keywords

GATE DIELECTICS; HAFNIUM OXYNITRIDE; INTERFACIAL LAYERS (IL); POST-DEPOSITION ANNEALING (PDA);

ANNEALING; BINDING ENERGY; CAPACITANCE; CHEMICAL BONDS; CMOS INTEGRATED CIRCUITS; DEPOSITION; DIELECTRIC MATERIALS; DIFFUSION; GERMANIUM; HYSTERESIS; LEAKAGE CURRENTS; MOS CAPACITORS; THERMODYNAMIC STABILITY; X RAY PHOTOELECTRON SPECTROSCOPY;

HAFNIUM COMPOUNDS;

EID: 9144227143 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.43.L1208 Document Type: Article

Times cited : (10)

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