Relaxation time of short wavelength intersubband transition in InGaAs/AlAs quantum wells

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 11, 1998, Pages 6020-6024

  Asano, Takashi ^a   Noda, Susumu ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Absorption saturation; Energy relaxation time; Inhomogeneous broadening; Intersubband transition; Short wavelength

Indexed keywords

BAND STRUCTURE; ELECTRON TRANSITIONS; LIGHT ABSORPTION; NONLINEAR OPTICS; RELAXATION PROCESSES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; ULTRAFAST PHENOMENA;

ENERGY RELAXATION; INTERSUBBAND TRANSITIONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032206585     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.6020     Document Type: Article

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