Intersubband transitions at 1.3 and 1.55 μm in a novel coupled InGaAs-AlAsSb double-quantum-well structure

IEEE Photonics Technology Letters

Volumn 11, Issue 6, 1999, Pages 632-634

  Neogi, A ^a,b   Mozume, T ^a   Yoshida, H ^a   Wada, O ^a  

^a WASEDA UNIVERSITY   (Japan)

^b New Ener Indust Res Devmt Org   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT ABSORPTION; OPTICAL COMMUNICATION; OPTICAL SWITCHES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; ULTRAFAST PHENOMENA;

INTERSUBBAND ABSORPTION; INTERSUBBAND TRANSITION; QUANTUM WELL STRUCTURE; TRANSIENT ANALYSIS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032642513     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.766767     Document Type: Article

References (9)

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3. B. Sung, H. C. Chui, M. M. Fejer, and J. S. Harris, "Near-infrared wavelength intersubband transitions in high indium content InGaAs/AlAs quantum wells grown on GaAs," Electron Lett., vol. 33, pp. 818-820, 1997.
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6. T. Mozume, H. Yoshida, A. Neogi, and M. Kudo, "1.45 μm intersubband absorption in InGaAs/AlAsSb grown by molecular beam epitaxy," Jpn. J. Appl. Phys., vol. 38, no. 2, 1998.
7. H. Yoshida, T. Mozume, T. Nishimura, and O. Wada, "Intersubband transition in coupled double quantum well for multi wavelength all-optical switching," Electron. Lett., vol. 54, p. 913, 1998.
8. T. Mozume, H. Yoshida, A. Neogi, K. Asakawa, and M. Kudo, "Near infrared intersubband transitions in InGaAs/AlAsSb coupled double quantum wells grown by molecular beam epitaxy."
9. H. Yoshida, T. Mozume, A. Neogi, and O. Wada, "Ultrafast all-optical switching at 1.3 μm/1.55 μm using a novel InGaAs/AlAsSb/InP coupled double quantum well structure for intersubband transitions," in Proc. IPRM '98, Tsukuba, Japan, 1998, pp. 247-249.