Thermal annealing effect on InAs/InGaAs quantum dots grown by atomic layer molecular beam epitaxy

Journal of Crystal Growth

Volumn 269, Issue 2-4, 2004, Pages 181-186

  Shi, G X ^a   Jin, P ^a   Xu, B ^a   Li, C M ^a   Cui, C X ^a   Wang, Y L ^a   Ye, X L ^a   Wu, J ^a   Wang, Z G ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

A1. Photoluminescence; A3. Molecular beam epitaxy; A3. Quantum dots; B2. Semiconductor III V material; B3. Laser device

Indexed keywords

INTERDIFFUSION (SOLIDS); LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; MONOLAYERS; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM DOTS; TRANSMISSION ELECTRON MICROSCOPY;

CAPPING; LASER DEVICES; SELF ASSEMBLED QUANTUM DOTS; SEMICONDUCTOR III-V MATERIALS;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 4344615440     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.05.058     Document Type: Article

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