Tuning optical properties of high In content InGaAs/GaAs capped InAs quantum dots by post growth rapid thermal annealing

Materials Science and Engineering C

Volumn 26, Issue 5-7, 2006, Pages 971-974

  Ilahi, B ^a   Sfaxi, L ^a   Bremond, G ^b   Maaref, H ^a  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

^b UNIVERSITÉ DE LYON   (France)

Author keywords

Photoluminescence; Quantum dots; Thermal annealing

Indexed keywords

ANNEALING; DIFFUSION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; THERMAL EFFECTS;

HETERO-CAPPING ALLOY; INTERDIFFUSION; THERMAL ANNEALING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33646846625     PISSN: 09284931     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.msec.2005.09.022     Document Type: Article

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