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Microelectronics Reliability

Volumn 41, Issue 12, 2001, Pages 2071-2074

SIMS study of silicon oxynitride prepared by oxidation of silicon-rich silicon nitride layer

(5) Poon, M C a Gao, Y a Kok, T C W a Myasnikov, A M a Wong, H b

a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (Hong Kong)

b CITY UNIVERSITY OF HONG KONG (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY; STOICHIOMETRY; THERMOOXIDATION; ULSI CIRCUITS;

NITRIDE FILMS;

SILICON NITRIDE;

EID: 0035576343 PISSN: 00262714 EISSN: None Source Type: Journal
DOI: 10.1016/S0026-2714(01)00216-5 Document Type: Article

Times cited : (2)

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