Influence of the growth temperature on the atomic distribution of TEOS deposited SiO2 films

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 5, 2005, Pages 1956-1963

  Vamvakas, Vassilis Em ^a   Davazoglou, Dimitris ^a  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC DISTRIBUTION; LORENTZIAN OSCILLATORS;

ANNEALING; DEPOSITION; SILICA;

SILICON COMPOUNDS;

EID: 31144462500     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2038047     Document Type: Article

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