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Volumn 437, Issue 1-2, 2003, Pages 266-271
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Optical absorption threshold of low pressure chemically vapor deposited silicon oxynitride films from SiCl2H2-NH3-N2O mixtures
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Author keywords
Chemical vapor deposition (CVD); Dielectrics; Optical properties
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Indexed keywords
CHEMICAL VAPOR DEPOSITION;
DIELECTRIC MATERIALS;
SILICON COMPOUNDS;
SILICON WAFERS;
SILICON OXYNITRIDE FILMS;
THIN FILMS;
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EID: 0038108627
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/S0040-6090(03)00683-7 Document Type: Article |
Times cited : (18)
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References (29)
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