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Volumn 437, Issue 1-2, 2003, Pages 266-271

Optical absorption threshold of low pressure chemically vapor deposited silicon oxynitride films from SiCl2H2-NH3-N2O mixtures

Author keywords

Chemical vapor deposition (CVD); Dielectrics; Optical properties

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; SILICON COMPOUNDS; SILICON WAFERS;

EID: 0038108627     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)00683-7     Document Type: Article
Times cited : (18)

References (29)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.