Effect of hydrophilic and hydrophobic processes on the transmittance of a GaAs/GaN bonding interface

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 28, Issue 7, 2007, Pages 1092-1096

  Guo, Jing ^a   Guo, Xia ^a   Liang, Ting ^a   Gu, Xiaoling ^a   Lin, Qiaoming ^a   Shen, Guangdi ^a  

^a BEIJING UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Bonding; GaAs GaN; Hydrophilic; Hydrophobic; Transmittance

Indexed keywords

BONDING; ELECTROLUMINESCENCE; LIGHT TRANSMISSION; SEMICONDUCTING GALLIUM ARSENIDE;

HYDROPHILIC PROCESSES; HYDROPHOBIC PROCESSES; TRANSMITTANCE;

GALLIUM NITRIDE;

EID: 34547625072     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (13)

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