Heterogeneous integration of visible AlGaInP and infrared AlInGaAs lasers with GaN-based light sources

Electronics Letters

Volumn 35, Issue 24, 1999, Pages 2120-2121

  Floyd, P D ^a   Treat, D W ^a   Bour, D P ^a  

^a PALO ALTO RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; HETEROJUNCTIONS; INFRARED RADIATION; LIGHT EMISSION; LIGHT EMITTING DIODES; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS;

INFRARED LASERS; WAFER FUSION;

QUANTUM WELL LASERS;

EID: 0033222021     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19991456     Document Type: Article

References (4)

1. BLACK, A., HAWKINS, A.R., MARGALIT, N.M., BABIC, D.I., HOLMES, A.L. Jr., CHANG, Y.-L., ABRAHAM, P., BOWERS, J.E., and HU, E.L.: 'Wafer fusion: materials issues and device results', IEEE J. Sel. Top. Quantum Electron., 1997, 3, (3), pp. 943-951
2. FLOYD, P.D., CHUA, C.L., TREAT, D.W., and BOUR, D.P.: 'Wafer fusion of infrared, laser diodes to GaN light-emitting heterostructures', IEEE Photonics Technol. Lett., 1998, 10, (11), pp. 1539-1541
3. LIAO, Z.L., and MULL, D.E.: 'Wafer fusion: A novel technique for optoelectronic device fabrication and monolithic integration', Appl. Phys. Lett., 1990, 56, (8), pp. 737-739
4. SUN, D., TREAT, D.W., and BOUR, D.P.: 'High performance 660nm InGaP/AlGaInP quantum well metal cladding ridge waveguide laser diode'. Electron. Lett., 1996, 32, (16), pp. 1488-1489