GaAs/GaN direct wafer bonding based on hydrophilic surface treatment

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 27, Issue 6, 2006, Pages 1042-1045

  Wang, Hui ^a   Guo, Xia ^a   Liang, Ting ^a   Liu, Shiwen ^a   Gao, Guo ^a   Shen, Guangdi ^a  

^a BEIJING UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Directly wafer bonding; GaAs; GaN; Optoelectronic integration

Indexed keywords

CRYSTAL STRUCTURE; GALLIUM NITRIDE; HYDROPHILICITY; INTEGRATION; LIGHT TRANSMISSION; MEASUREMENTS; NITROGEN; PHOTOLUMINESCENCE; PROTECTIVE ATMOSPHERES; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE TREATMENT;

BONDING INTERFACE; DIRECTLY WAFER BONDING; OPTOELECTRONIC INTEGRATION; TRANSLUCENT;

BONDING;

EID: 33747842786     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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