Transmission electron microscopy studies of electrical active GaAs/GaN interface obtained by wafer bonding

Materials Research Society Symposium - Proceedings

Volumn 722, Issue , 2002, Pages 205-210

  Jasinski, J ^a   Liliental Weber, Z ^a   Estrada, S ^b   Hu, E ^b  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; COOLING; CRYSTALS; ENERGY DISPERSIVE SPECTROSCOPY; GALLIUM NITRIDE; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL EXPANSION; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

WAFER BONDING;

INTERFACES (MATERIALS);

EID: 0036454433     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-722-k7.15     Document Type: Conference Paper

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