A NiSi salicide technology for advanced logic devices

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 1991-January, Issue , 1991, Pages 653-656

  Morimoto, T ^a   Momose, H S ^a   Iinuma, T ^a   Kunishima, I ^a   Suguro, K ^a   Okana, H ^a   Katakabe, I ^a   Nakajima, H ^a   Tsuchiaki, M ^a   Ono, M ^a   Katsumata, Y ^a   Iwai, H ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; BORON; ELECTRON DEVICES; LOGIC DEVICES; MOSFET DEVICES; NICKEL; NICKEL COMPOUNDS; RECONFIGURABLE HARDWARE; TEMPERATURE;

ADVANCED-LOGIC DEVICE; ARSENIC ATOM; DEEP SUBMICRON DEVICE; DUAL-GATE CMOS; LOW TEMPERATURES; NICKEL SILICIDE; P-N JUNCTION; SHORT PERIODS;

SILICIDES;

EID: 81355127855     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1991.235387     Document Type: Conference Paper

References (0)