메뉴 건너뛰기




Volumn 33, Issue 6, 2002, Pages 535-541

High-resolution transmission electron microscopy of phase formation and growth in metal-Si-Ge systems

Author keywords

Interfacial reactions; Metal; Si Ge

Indexed keywords

ARTICLE;

EID: 0036392463     PISSN: 09684328     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0968-4328(02)00008-2     Document Type: Article
Times cited : (8)

References (23)
  • 1
    • 36449002006 scopus 로고
    • Electrical transport-properties in thin-films of copper silicide
    • Aboelfotoh, M.O., Krusin-Elbaum, L., 1991. Electrical transport-properties in thin-films of copper silicide. J. Appl. Phys. 70, 3382-3384.
    • (1991) J. Appl. Phys. , vol.70 , pp. 3382-3384
    • Aboelfotoh, M.O.1    Krusin-Elbaum, L.2
  • 5
    • 0027906671 scopus 로고
    • The influence of germanium substitution on the phase-stability of 3D transition-metal disilicides
    • Boutarek, N., Madar, R., 1993. The influence of germanium substitution on the phase-stability of 3D transition-metal disilicides. Appl. Surf. Sci. 73, 209-213.
    • (1993) Appl. Surf. Sci. , vol.73 , pp. 209-213
    • Boutarek, N.1    Madar, R.2
  • 6
    • 0032518554 scopus 로고    scopus 로고
    • High resolution transmission electron microscopy of amorphous interlayers in metal-silicon systems
    • Chen, L.J., Lin, J.H., Lee, T.L., Hsieh, W.Y., Liang, J.M., Wang, M.H., 1998. High resolution transmission electron microscopy of amorphous interlayers in metal-silicon systems. J. Micros. Res. Technol. 40, 136-151.
    • (1998) J. Micros. Res. Technol. , vol.40 , pp. 136-151
    • Chen, L.J.1    Lin, J.H.2    Lee, T.L.3    Hsieh, W.Y.4    Liang, J.M.5    Wang, M.H.6
  • 8
    • 0022897506 scopus 로고
    • Thermodynamic and kinetic aspects of the crystal to glass transformation in metallic materials
    • Johnson, W.L., 1986. Thermodynamic and kinetic aspects of the crystal to glass transformation in metallic materials. Prog. Mater. Sci. 30, 81-134.
    • (1986) Prog. Mater. Sci. , vol.30 , pp. 81-134
    • Johnson, W.L.1
  • 9
    • 0000444271 scopus 로고
    • Unusual low resistivity of copper-germanide thin films formed at low-temperatures
    • Krusin-Elbaum, L., Aboelfotoh, M.O., 1991. Unusual low resistivity of copper-germanide thin films formed at low-temperatures. Appl. Phys. Lett. 58, 1341-1343.
    • (1991) Appl. Phys. Lett. , vol.58 , pp. 1341-1343
    • Krusin-Elbaum, L.1    Aboelfotoh, M.O.2
  • 10
    • 84992648937 scopus 로고    scopus 로고
    • PhD Thesis. National Tsing Hua Unviersity, Hsinhcu, Taiwan
    • Lai, J.B., 1999. PhD Thesis. National Tsing Hua Unviersity, Hsinhcu, Taiwan.
    • (1999)
    • Lai, J.B.1
  • 12
    • 0010693778 scopus 로고    scopus 로고
    • Phase formation and electrical resistivity in the interfacial reactions of ultrahigh vacuum deposited Cu thin films on epitaxial Si-Ge layers on Si and Ge
    • Lai, J.B., Chen, L.J., 2000. Phase formation and electrical resistivity in the interfacial reactions of ultrahigh vacuum deposited Cu thin films on epitaxial Si-Ge layers on Si and Ge. J. Appl. Phys. 87, 2237-2244.
    • (2000) J. Appl. Phys. , vol.87 , pp. 2237-2244
    • Lai, J.B.1    Chen, L.J.2
  • 13
    • 0000429275 scopus 로고
    • Formation of amorphous interlayers by solid-state diffusion in Ti thin films on epitaxial Si-Ge layers on (001)Si
    • Lai, J.B., Liu, C.S., Chen, L.J., Cheng, J.Y., 1995. Formation of amorphous interlayers by solid-state diffusion in Ti thin films on epitaxial Si-Ge layers on (001)Si. J. Appl. Phys. 78, 6539-6542.
    • (1995) J. Appl. Phys. , vol.78 , pp. 6539-6542
    • Lai, J.B.1    Liu, C.S.2    Chen, L.J.3    Cheng, J.Y.4
  • 14
    • 84992645840 scopus 로고    scopus 로고
    • MS Thesis. National Tsing Hua University, Hsinchu, Taiwan
    • Lee, C.S., 1999. MS Thesis. National Tsing Hua University, Hsinchu, Taiwan.
    • (1999)
    • Lee, C.S.1
  • 16
    • 0005135650 scopus 로고
    • Thin film compound phaseformation sequence-An effective heat of formation model
    • Pretorius, R., Marais, T.K., Theron, C.C., 1993. Thin film compound phaseformation sequence-an effective heat of formation model. Mater. Sci. Engng R10, 1-83.
    • (1993) Mater. Sci. Engng. , vol.R10 , pp. 1-83
    • Pretorius, R.1    Marais, T.K.2    Theron, C.C.3
  • 18
    • 0001016953 scopus 로고
    • Thermodynamics of solid transition-metal silicides
    • Schlesinger, M.E., 1990. Thermodynamics of solid transition-metal silicides. Chem. Rev. 90, 607-628.
    • (1990) Chem. Rev. , vol.90 , pp. 607-628
    • Schlesinger, M.E.1
  • 19
    • 0024737519 scopus 로고
    • Nucleation and growth in the reaction of titanium with germanium and some silicon germanium alloys
    • Thomas, O., d'Heurle, F.M., Delage, S., Scilla, G., 1989a. Nucleation and growth in the reaction of titanium with germanium and some silicon germanium alloys. Appl. Surf. Sci. 38, 27-36.
    • (1989) Appl. Surf. Sci. , vol.38 , pp. 27-36
    • Thomas, O.1    D'Heurle, F.M.2    Delage, S.3    Scilla, G.4
  • 20
    • 36549091455 scopus 로고
    • Reaction of titanium with germanium and silicon-germanium alloys
    • Thomas, O., Delage, S., d'Heurle, F.M., Scilla, G., 1989b. Reaction of titanium with germanium and silicon-germanium alloys. Appl. Phys. Lett. 54, 228-230.
    • (1989) Appl. Phys. Lett. , vol.54 , pp. 228-230
    • Thomas, O.1    Delage, S.2    D'Heurle, F.M.3    Scilla, G.4
  • 21
    • 0025463231 scopus 로고
    • Some titanium germanium and silicon-compounds-reaction and properties
    • Thomas, O., d'Heurle, F.M., Delage, S., 1990. Some titanium germanium and silicon-compounds-reaction and properties. J. Mater. Res. 5, 1453-1462.
    • (1990) J. Mater. Res. , vol.5 , pp. 1453-1462
    • Thomas, O.1    D'Heurle, F.M.2    Delage, S.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.