The effect of nitrogen in a p+ polysilicon gate on boron penetration through the gate oxide

Journal of the Electrochemical Society

Volumn 144, Issue 12, 1997, Pages 4326-4330

  Nakayama, Satoshi ^a   Sakai, Tetsushi ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION; INTERFACES (MATERIALS); MOS DEVICES; NITROGEN; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING BORON; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SILICA;

GATE OXIDE; POLYSILICON;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0031364919     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838186     Document Type: Article

References (12)

1. G. J. Hu and R. H. Bruce, IEEE Trans, Electron Devices, ED-32, 534 (1985).
2. K. Tanaka and M. Fukuma, in Tech. Dig. IEDM'87, p. 87, IEEE, Piscataway, NJ (1987).
3. J. Y.-C. Sun, C. Wong, Y. Taur, and C.-K. Hsu, in 1989 Symposium on VLSI Technology, Digest of Technical Papers, p. 17 (1985).
4. F. K. Baker, J. R. Pfiester, T. C. Mele, H.-H. Tseng, P. J. Tobin, J. D. Haydew, C. D. Gunderson, L. C. Parillo, in Tech. Digest of IEDM'89, p. 443 (1989).
5. J. M. Sung, C. Y. Lu, M. L. Chen, and S. J. Hillenius, ibid., p. 447.
6. K. Uwasaw, T. Mogami, T. Kunio, and M. Fukuma, in Technical Digest of IEDM'93, p. 895, IEEE, Piscataway, NJ (1993).
7. S. Nakayama, in ULSI Science and Technology/1991, J. M. Andrews and G. K. Celler, Editors, PV 91-11, p. 9, The Electrochemical Society Proceedings Series, Pennington, NJ (1991).
8. Y. Okazaki, S. Nakayama, M. Miyake, and T. Kobayashi, IEEE Trans. Electron Devices, ED-41, 2369 (1994).
9. T. Kuroi, T. Yamaguchi, M. Shirahata, Y. Okumura, Y. Kawasaki, M. Inuishi, and N. Tsubouchi, in Tech. Dig. IEDM'93, p. 325, IEEE, Piscataway, NJ (1993).
10. S. C. Sun, L. S. Wang, F. L. Yeh, and C. H. Chen, in 1995 VLSI Technology Digest, p. 121 (1995).
11. S. Nakayama and T. Sakai, J. Appl. Phys., 79, 4024 (1996).
12. T. Aoyama, K. Suzuki, H. Tashiro, Y. Toda, T. Yamazaki, Y. Arimoto, and T. Into, This Journal, 140, 3624 (1993).