Nitrogen implanted polysilicon resistor for high-voltage CMOS technology application

IEEE Electron Device Letters

Volumn 22, Issue 11, 2001, Pages 524-526

  Chen, Chung Hui ^a   Fang, Yean Kuen ^a   Yang, Chih Wei ^a   Wang, Ta Wei ^a   Hsu, Yung Lung ^b   Hsu, Shun Liang ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

Hydrogen intrusion; Nitrogen implantation; Polysilicon; TCR; VCR

Indexed keywords

ELECTRIC POTENTIAL; HYDROGEN; NITROGEN; POLYSILICON; RESISTORS; TEMPERATURE; THIN FILMS;

HYDROGEN INTRUSION; NITROGEN IMPLANTATION; POLYSILICON RESISTOR;

CMOS INTEGRATED CIRCUITS;

EID: 0035506258     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.962651     Document Type: Article

References (6)

1. Influence of hydrogen on electrical characteristics of poly-Si resistor
2. The hydrogen content of plasma-deposited silicon nitride
3. Silicon processing for the VLSI era
4. Method for manufacturing semiconductor device having bipolar transistor and polycrystalline silicon resistor
5. Method for shielding polysilicon resistors from hydrogen intrusion
6. Modeling and optimization of monolithic polycrystalline silicon resistors