Properties of nitrogen doped silicon films deposited by low-pressure chemical vapor deposition from silane and ammonia

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 5, 2000, Pages 2389-2393

  Temple Boyer, P ^a   Jalabert, L ^a   Masarotto, L ^a   Alay, J L ^b   Morante, J R ^b  

^a LAAS CNRS   (France)

^b UNIVERSITY OF BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY OF SOLIDS; NITROGEN; REFRACTIVE INDEX; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; SILANES; STOICHIOMETRY; STRESS ANALYSIS;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD);

SEMICONDUCTING SILICON;

EID: 0034272654     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1286714     Document Type: Article

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