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Volumn 40, Issue 6, 2005, Pages 1405-1408

Study of electrical and structural properties of boron doped polysilicon films with a low nitrogen content

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; MOS DEVICES; PHOTOCONDUCTIVITY; POLYSILICON; RAPID THERMAL ANNEALING; SEMICONDUCTOR DOPING;

ANNEALING TEMPERATURES; LOW-PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD); NITROGEN CONTENT; OPTIMAL CONDITIONS;

THIN FILMS;

EID: 27544444949 PISSN: 00222461 EISSN: 15734803 Source Type: Journal
DOI: 10.1007/s10853-005-0574-2 Document Type: Conference Paper

Times cited : (5)

References (9)

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