Growth mechanisms of crystallites in the mixed-phase silicon films deposited by low-pressure chemical vapor deposition

Thin Solid Films

Volumn 376, Issue 1-2, 2000, Pages 38-46

  Wee, Haesung ^a   Lee, Choochon ^a   Shin, Sung Chul ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; FILM GROWTH; FILM PREPARATION; SEMICONDUCTING SILICON; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

LOW-PRESSURE CHEMICAL VAPOR DEPOSITION; MIXED-PHASE SILICON FILMS; POLYSILICON;

SEMICONDUCTING FILMS;

EID: 0034317208     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01216-5     Document Type: Article

References (24)

1. Hatalis M.K., Greve D.W. J. Appl. Phys. 63:1988;2260.
2. Voutsas A.T., Hatalis M.K. J. Electrochem. Soc. 140:1993;871.
3. Joubert P., Loisel B., Chouan Y., Haji L. J. Electrochem. Soc. 134:1987;2541.
4. Harbeke G., Krausbauer L., Steigmer E.F., Widmer A.E., Kppert H.F., Neugebauer G. J. Electrochem. Soc. 131:1984;675.
5. Bisaro R., Magarino J., Proust N., Zellama K. J. Appl. Phys. 59:1986;1167.
6. Kamins T.I. Polycrystalline Silicon for Integrated Circuit Applications, Ch. 2. 1988;Kluwer, Boston.
7. Voutsas A.T., Hatalis M.K. J. Electrochem. Soc. 139:1992;2659.
8. Harbeke G., Krausbaur L., Steigmeier E.F., Widmer A.E., Kappert H.F., Neqgebauer G. RCA Rev. 44:1983;287.
9. Voutsas A.T., Hatalis M.K. Appl. Phys. Lett. 63:1993;1546.
10. Voutsas A.T., Hatalis M.K. J. Appl. Phys. 76:1994;777.
11. Voutsas A.T., Hatalis M.K. J. Electron. Mater. 23:1994;319.
12. Kouvatsos D.N., Voutsas A.T., Hatalis M.K. J. Electron. Mater. 28:1999;19.
13. Hatalis M.K., Kouvatsos D.N., Kung J.H., Voutsas A.T., Kanicki J. Thin Solid Films. 338:1999;281.
14. Kim J.H., Lee J.Y., Nam K.S. J. Appl. Phys. 79:1996;1794.
15. Kretz T., Pribat D., Legagneux P., Plais F., Huet O., Bisaro R. Jpn. J. Appl. Phys. 34(6A):1995;L660.
16. Hasegawa S., Watanabe S., Inokuma T., Kurata Y. J. Appl. Phys. 77:1995;1938.
17. Miyasaka M., Nakazawa T., Itoh W., Yudasaka I., Ohshima H. J. Appl. Phys. 74:1993;2870.
18. Haji L., Joubert P., Stoemenos J., Economou N.A. J. Appl. Phys. 75:1994;3944.
19. Tanikawa A., Tatsumi T. J. Electrochem. Soc. 141:1994;2848.
20. Masaki Y., LeComber P.G., Fitzgerald A.G. J. Appl. Phys. 74:1993;129.
21. Khait Y.u.L., Weil R. J. Appl. Phys. 78:1995;6504.
22. Drosd R., Washburn J. J. Appl. Phys. 53:1982;397.
23. Drosd R., Washburn J. J. Appl. Phys. 51:1980;4106.
24. Csepregi L., Kennedy E.F., Mayer J.W., Sigmon T.W. J. Appl. Phys. 49:1978;3906.