The role of carrier lifetime in forward bias degradation of 4H-SiC PiN diodes

Materials Science Forum

Volumn 457-460, Issue II, 2004, Pages 1053-1056

  Hefner, A ^a   McNutt, T ^b   Berning, D ^a   Singh, R ^a   Akuffo, A ^c  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b University of Arkansas   (United States)

^c School of Engineering   (United States)

Author keywords

End region recombination; Forward bias degradation; High voltage; Lifetime; Parameter extraction; PiN diode; Power device; Reverse recovery; SiC; Stacking fault; Transient waveform

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; LEAST SQUARES APPROXIMATIONS; MOSFET DEVICES; PARAMETER ESTIMATION; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; STACKING FAULTS;

BIAS STRESS; CARRIER LIFETIME REDUCTION; FORWARD BIAS DEGRADATION; PARAMETER EXTRACTION; POWER DIODES; TRANSIENT WAVEFORM;

SEMICONDUCTOR DIODES;

EID: 8744310194     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.1053     Document Type: Conference Paper

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