Measurements of breakdown field and forward current stability in 3C-SiC pn junction diodes grown on step-free 4H-SiC

Materials Science Forum

Volumn 527-529, Issue PART 2, 2006, Pages 1335-1338

  Neudeck, Philip G ^a   Spry, David J ^a   Trunek, Andrew J ^a  

^a NASA GLENN RESEARCH CENTER   (United States)

Author keywords

3C SiC; Bipolar diode; Breakdown field; Electroluminescence; Epitaxial growth; Heteroepitaxy; Mesa; P+n diode; Pn junction; Rectifier; Reverse breakdown

Indexed keywords

ELECTROLUMINESCENCE; EPITAXIAL GROWTH; OHMIC CONTACTS; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE;

BIPOLAR DIODE; BREAKDOWN FIELD; FORWARD CURRENT STABILITY; JUNCTION DIODES; REVERSE BREAKDOWN;

SEMICONDUCTOR DIODES;

EID: 34547549484     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.1335     Document Type: Conference Paper

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