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Volumn 42, Issue 12, 2007, Pages 4591-4602

Physical properties of low-k films based on the co-condensation of methyltrimethoxysilane with a bridged silsesquioxane

Author keywords

[No Author keywords available]

Indexed keywords

CONDENSATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; FRACTURE TOUGHNESS; MONOMERS; NANOINDENTATION; NUCLEAR MAGNETIC RESONANCE; PERMITTIVITY; STRENGTH OF MATERIALS;

EID: 34547325238     PISSN: 00222461     EISSN: 15734803     Source Type: Journal    
DOI: 10.1007/s10853-006-0575-9     Document Type: Article
Times cited : (20)

References (19)
  • 1
    • 0008463467 scopus 로고    scopus 로고
    • International Technology Roadmap for Semiconductors , San Jose, CA
    • International Technology Roadmap for Semiconductors (2003) Semiconductor Industry Association, San Jose, CA
    • (2003) Semiconductor Industry Association
  • 11
    • 34547375264 scopus 로고    scopus 로고
    • Eizenberg M, Shina AK (eds) Interlayer dielectrics for semiconductor technologies. Elsevier Academic Press, London, p
    • Ho PS, Leu J, Morgan M, Kiene M, Zhao J-H, Hu C (2003) In: Murarka SP, Eizenberg M, Shina AK (eds) Interlayer dielectrics for semiconductor technologies. Elsevier Academic Press, London, p 37
    • (2003) Murarka SP , pp. 37
    • Ho, P.S.1    Leu, J.2    Morgan, M.3    Kiene, M.4    Zhao, J.-H.5    Hu, C.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.