Fundamental band edge absorption in nominally undoped and doped 4H-SiC

Journal of Applied Physics

Volumn 101, Issue 12, 2007, Pages

  Grivickas, P ^a,b,c   Grivickas, V ^b   Linnros, J ^a   Galeckas, A ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b VILNIUS UNIVERSITY   (Lithuania)

^c WASHINGTON STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION MEASUREMENTS; BAND EDGE ABSORPTION; INDIRECT TRANSITION THEORY; MOMENTUM CONSERVING PHONONS;

ANISOTROPY; BINDING ENERGY; DOPING (ADDITIVES); MOMENTUM; PHONONS; POLARIZATION;

SILICON CARBIDE;

EID: 34547322966     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2749335     Document Type: Article

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