Characterization of 4H-SiC band-edge absorption properties by free-carrier absorption technique with a variable excitation spectrum

Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 617-620

  Grivickas, P ^a   Grivickas, V ^b   Galeckas, A ^a,b   Linnros, J ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b VILNIUS UNIVERSITY   (Lithuania)

Author keywords

Band to band absorption; Phonons; Thermal band gap narrowing

Indexed keywords

ABSORPTION SPECTRA; ELECTRON ABSORPTION; ENERGY GAP; OPTICAL TRANSITIONS; PHONONS; SILICON CARBIDE;

ABSORPTION COEFFICIENT; BAND TO BAND ABSORPTION; EXCITATION SPECTRUM; THERMAL BAND GAP NARROWING; ABSORPTION CO-EFFICIENT; BAND-EDGE ABSORPTION; FINE STRUCTURES; FREE CARRIER ABSORPTION; NOVEL TECHNIQUES; TEMPERATURE RANGE; THERMAL BANDS;

SILICON CARBIDE; ABSORPTION SPECTROSCOPY;

EID: 8744226005     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.389-393.617     Document Type: Article

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