Two-photon spectroscopy of 4H-SiC by using laser pulses at below-gap frequencies

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 605-608

  Grivickas, V ^a   Grivickas, P ^b   Linnros, J ^b   Galeckas, A ^a  

^a VILNIUS UNIVERSITY   (Lithuania)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

Direct band gap transitions; Free carrier absorption; M and L critical points; Time resolved spectroscopy; Two photon absorption coefficient

Indexed keywords

BAND STRUCTURE; CHEMICAL VAPOR DEPOSITION; CONCENTRATION (PROCESS); CRYOSTATS; HYDROGEN; LASER PULSES; NATURAL FREQUENCIES; PHOTONS;

DIRECT BAND GAP TRANSITIONS; FREE-CARRIER ABSORPTION (FCA); M AND L CRITICAL POINTS; TIME-RESOLVED SPECTROSCOPY; TWO-PHOTON ABSORPTION (TPA) COEFFICIENT;

SILICON CARBIDE;

EID: 8744221491     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.605     Document Type: Conference Paper

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