Lattice Dynamics of 4H-SiC by Inelastic X-Ray Scattering

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 257-260

  Serrano, J ^a   Strempfer, J ^a   Cardona, M ^a   Schwoerer Bohning M ^b   Requardt, H ^c   Lorenzen, M ^c   Stojetz, B ^d   Pavone, P ^d   Choyke, W J ^e  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b ARGONNE NATIONAL LABORATORY   (United States)

^c EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

^d UNIVERSITY OF REGENSBURG   (Germany)

^e UNIVERSITY OF PITTSBURGH   (United States)

Author keywords

4H Silicon Carbide; Inelastic X Ray Scattering; Phonon Dispersion Relations

Indexed keywords

CRYSTAL LATTICES; MATHEMATICAL MODELS; NEUTRON SCATTERING; OPTOELECTRONIC DEVICES; PHONONS; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SYNCHROTRON RADIATION; THERMAL CONDUCTIVITY; X RAY SCATTERING;

MONOCHROMATIZED SYNCHROTRON RADIATIONS;

SILICON CARBIDE;

EID: 18744427931     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.433-436.257     Document Type: Conference Paper

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