Impacts of SiN-capping layer on the device characteristics and hot-carrier degradation of nMOSFETs

IEEE Transactions on Device and Materials Reliability

Volumn 7, Issue 1, 2007, Pages 175-180

  Lu, Chia Yu ^b,c   Lin, Horng Chih ^a,b,d   Lee, Yao Jen ^d   Shie, Yu Lin ^b,e   Chao, Chih Cheng ^b  

^a IEEE

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^d NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^e InnoLux Display Corporation   (Taiwan)

Author keywords

Hot electron effect; Low pressure chemical vapor deposition (LPCVD); nMOSFET; Silicon nitride (SiN) capping; Tensile strain

Indexed keywords

ENERGY GAP; HOT ELECTRONS; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; SILICON NITRIDE; TENSILE STRAIN; THRESHOLD VOLTAGE;

BANDGAP NARROWING; HOT-ELECTRON EFFECTS; SILICON NITRIDE (SIN) CAPPING;

MOSFET DEVICES;

EID: 34547227608     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2006.889268     Document Type: Conference Paper

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