Formation of germanium nanocrystals embedded in a silicon-oxygen-nitride layer

Journal of the Electrochemical Society

Volumn 154, Issue 6, 2007, Pages

  Tu, Chun Hao ^a   Chang, Ting Chang ^b,c   Liu, Po Tsun ^a   Weng, Chi Feng ^b   Liu, Hsin Chou ^a   Chang, Li Ting ^a   Lee, Sheng Kai ^a   Chen, Wei Ren ^a   Sze, Simon M ^a   Chang, Chun Yen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c ELECTROCHEMICAL SOCIETY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BLOCKING OXIDE LAYERS; CHARGE STORAGE ELEMENTS; GATE STACK LAYERS;

GERMANIUM; HIGH TEMPERATURE EFFECTS; NONVOLATILE STORAGE; NUCLEATION; SILICON NITRIDE; THRESHOLD VOLTAGE;

NANOCRYSTALS;

EID: 34547196998     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2717494     Document Type: Article

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