Performance of silicon nanocrystal non-volatile memory devices under various programming mechanisms

Journal of Nanoscience and Nanotechnology

Volumn 7, Issue 1, 2007, Pages 329-334

  Ng, C Y ^a   Chen, T P ^a   Wong, J I ^a   Yang, M ^a   Khor, T S ^a   New, C L ^a   Li, C M ^b   Trigg, A D ^c   Li, S ^d  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b Nanyang Technological University   (Singapore)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

^d UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

Memory Device; Programming Mechanism; Silicon Nanocrystal

Indexed keywords

LOW ENERGIES; NON VOLATILE MEMORY (NVM) DEVICES; PROGRAMMING MECHANISMS; SILICON NANOCRYSTAL;

NANOCRYSTALLINE ALLOYS; NANOCRYSTALS; NANOSTRUCTURES; NANOTECHNOLOGY; NONMETALS; OPTICAL WAVEGUIDES; SILICON;

DATA STORAGE EQUIPMENT;

NANOPARTICLE; OXIDE; SILICON;

ARTICLE; CHEMISTRY; COMPUTER PROGRAM; DATA STORAGE DEVICE; ELECTRONICS; EQUIPMENT DESIGN; INFORMATION RETRIEVAL; NANOTECHNOLOGY; TIME; TRANSMISSION ELECTRON MICROSCOPY;

COMPUTER STORAGE DEVICES; ELECTRONICS; EQUIPMENT DESIGN; INFORMATION STORAGE AND RETRIEVAL; MICROSCOPY, ELECTRON, TRANSMISSION; NANOPARTICLES; NANOTECHNOLOGY; OXIDES; SILICON; SOFTWARE; TIME FACTORS;

EID: 34447341218     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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