Selective area growth (SAG) and epitaxial lateral overgrowth (ELO) of GaN using tungsten mask

MRS Internet Journal of Nitride Semiconductor Research

Volumn 4, Issue SUPPL. 1, 1999, Pages

  Kawaguchi, Yasutoshi ^a   Nambu, Shingo ^a   Sone, Hiroki ^a   Yamaguchi, Masahito ^a   Miyake, Hideto ^b   Hiramatsu, Kazumasa ^b   Sawaki, Nobuhiko ^a   Iyechika, Yasushi ^c   Maeda, Takayoshi ^c  

^a NAGOYA UNIVERSITY   (Japan)

^b MIE UNIVERSITY   (Japan)

^c SUMITOMO CHEMICAL CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; HYDROGEN; METALLORGANIC VAPOR PHASE EPITAXY; NITROGEN; SCANNING ELECTRON MICROSCOPY; SURFACE PROPERTIES; X RAY DIFFRACTION ANALYSIS;

DISLOCATION DENSITY; EPITAXIAL LATERAL GROWTH (ELO); GROWTH TEMPERATURE; LATERAL OVERGROWTH RATE;

GALLIUM NITRIDE;

EID: 3442885499     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300002866     Document Type: Conference Paper

References (14)

1. H. Amano, M. Kito, K. Hiramatsu and I. Akasaki: Jpn. J. Appl. Phys. 28 (1989) L2112.
2. S. Nakamura and G. Fasol: The blue laser diode (Splinger-Verlag Berlin Heidelberg, 1997)
3. Y.-F. Wu, B. P. Keller, S. Keller, N. X. Nguyen, M. Le, C. Nguyen, T. J. Jenkins, L. T. Kehias, S. P. DenBaars and U. K. Mishra: IEEE Electron Device Lett. 18 (1997) 438.
4. Y.-F. Wu, B. P. Keller, P. Fini, S. Keller, T. J. Jenkins, L. T. Kehias, S. P. DenBaars and U. K. Mishra: IEEE Electron Device Lett. 19 (1998) 50.
5. C. O. Bozler and G. D. Alley: IEEE Trans. Electron Devices ED-27 (1980) 1128.
6. Y. Ujiie and T. Nishinaga: Jpn. J. Appl. Phys. 28 (1989) L377.
7. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano and K. Chocho: Appl. Phys. Lett. 72 (1998) 211.
8. R. Vetury, H. Marchand, J. P. Ibbetson, P. T. Fini, S. Keller, J. Speck, S. P. DenBaars and U. K. Mishra: Extended Abstracts of 25th International Symposium on Compound Semiconductors, Nara (1998) S-2
9. A. Sakai, H. Sunakawa and A. Usui: Appl. Phys. Lett. 71 (1997) 2259.
10. H. Matsushima, M. Yamaguchi, K. Hiramatsu and N. Sawaki: J. Cryst. Growth 189/190 (1998) 78.
11. O.-H. Nam, M. D. Bremser, T. S. Zheleva and R. F. Davis: Appl. Phys. Lett. 71 (1997) 2638
12. Y. Kawaguchi, S. Nambu, H. Sone, T. Shibata, H. Matsushima, M. Yamaguchi, H. Miyake, K. Hiramatsu and N. Sawaki: Jpn. J. Appl. Phys. 37 (1998) L845.
13. T. Shibata, H. Sone, K. Yahashi, M. Yamaguchi, K. Hiramatsu, N. Sawaki and N. Itoh: J. Cryst. Growth 189/190 (1998) 67.
14. A. Usui, H. Sunakawa, A. Sakai and A. A. Yamaguchi: Jpn. J. Appl. Phys. 36 (1997) L899.