Study on the kinetics of the formation reaction of GaN from Ga-solutions under ammonia atmosphere

Journal of Crystal Growth

Volumn 305, Issue 2 SPEC. ISS., 2007, Pages 326-334

  Sun, G ^a   Meissner, E ^b   Berwian, P ^b   Muller G ^a,b   Friedrich, J ^b  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

Author keywords

A1. Induction period; A1. Nucleation; A1. Reaction kinetics; A2. Crystal growth; A2. Solution growth; B2. GaN single crystals

Indexed keywords

CRYSTAL GROWTH; NUCLEATION; REACTION KINETICS; SINGLE CRYSTALS; SOLUTIONS; THERMOGRAVIMETRIC ANALYSIS;

GAN SINGLE CRYSTALS; INDUCTION PERIOD; SOLUTION GROWTH;

GALLIUM NITRIDE;

EID: 34347364555     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.04.007     Document Type: Article

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