Microwave power performance of MBE-grown AlGaN/GaN HEMTs on HVPE GaN substrates

Electronics Letters

Volumn 42, Issue 11, 2006, Pages 663-665

  Storm, D F ^a   Roussos, J A ^a   Katzer, D S ^a   Mittereder, J A ^a   Bass, R ^a   Binari, S C ^a   Hanser, D ^b   Preble, E A ^b   Evans, K ^b  

^a NAVAL RESEARCH LABORATORY   (United States)

^b KYMA TECHNOLOGIES INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRON MOBILITY; HYDRIDES; MICROWAVE POWER TRANSMISSION; MOLECULAR BEAM EPITAXY; PLASMAS; SUBSTRATES;

HYDRIDE VAPOR PHASE EPITAXY (HVPE); MICROWAVE POWER PERFORMANCE; OFF-STATE BREAKDOWN VOLTAGES; SHEET DENSITIES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33744521412     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20060648     Document Type: Article

References (10)

1. Wu, Y.-F.: et al. ' 30-W/mm GaN HEMTs by field plate optimization ', IEEE Electron Device Lett., 2004, 25, p. 117
2. Johnson, J.W.: et al. ' 12 W/mm AlGaN-GaN HFETs on silicon substrates ', IEEE Electron Device Lett., 2004, 25, p. 459
3. Chu, K.K.: et al. ' 9.4W/mm power density AlGaN-GaN HEMTs on free-standing GaN substrates ', IEEE Electron Device Lett., 2004, 25, p. 596
4. 2/Vs in MBE-grown AlGaN/GaN HEMT structures ', Electron. Lett., 2004, 40, p. 1226
5. Storm, D.F.: et al. ' Growth and characterization of plasma-assisted molecular beam epitaxial-grown AlGaN/GaN heterostructures on free-standing hydride vapor phase epitaxy GaN substrates ', J. Vac. Sci. Technol. B, 2005, 23, p. 1190
6. Storm, D.F.: et al. ' Reduction of buffer layer conduction near plasma-assisted molecular-beam epitaxy grown GaN/AlN interfaces by beryllium doping ', Appl. Phys. Lett., 2002, 81, p. 3819
7. Katzer, D.S.: et al. ' Molecular beam epitaxy of beryllium-doped GaN buffer layers for AlGaN/GaN HEMTs ', J. Cryst. Growth, 2003, 251, p. 481
8. Vaudo, R.P.: et al. ' Characteristics of semi-insulating, Fe-doped GaN substrates ', Phys. Status Solidi A, 2003, (1), p. 1-4
9. Vescan, A.: et al. ' MBE grown AlGaN/GaN MODFETs with high breakdown voltage ', J. Cryst. Growth, 1999, 201/202, p. 327
10. Binari, S.C.: et al. ' Trapping effects and microwave power performance in AlGaN/GaN HEMTs ', IEEE Trans. Electron. Devices, 2001, 48, p. 465