Growth and characterization of plasma-assisted molecular beam epitaxial-grown AlGaN/GaN heterostructures on free-standing hydride vapor phase epitaxy GaN substrates

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 3, 2005, Pages 1190-1193

  Storm, D F ^a   Katzer, D S ^a   Mittereder, J A ^a   Binari, S C ^a   Shanabrook, B V ^a   Zhou, Lin ^b   Smith, David J ^b   Xu, X ^c   McVey, D ^c   Vaudo, R P ^c   Brandes, G R ^c  

^a NAVAL RESEARCH LABORATORY   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

^c Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVE SUBSTRATES; GATE LEAKAGE; SHEET DENSITIES;

CURRENT DENSITY; HALL EFFECT; HIGH ELECTRON MOBILITY TRANSISTORS; HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING ALUMINUM COMPOUNDS; VAPOR PHASE EPITAXY;

HETEROJUNCTIONS;

EID: 31144439525     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1885013     Document Type: Conference Paper

References (13)

1. A. Saxler, Y. Wu, J. Jenny, P. Chavarkar, R. Peter Smith, S. Sheppard, P. Parikh, S. Allen, and J. Palmour, presented at the International Workshop on Nitride Semiconductors., Pittsburgh, PA, 19-23 July 2004.
2. M. Micovic, J. S. Moon, T. Hussain, P. Hashimoto, W. S. Wong, and L. McCray, Phys. Status Solidi A 188, 31 (2001).
3. Nils G. Weimann, et al., Proceedings of the IEEE Lester Eastman Conference on High Performance Devices (2002), p. 126.
4. M. J. Manfra, L. N. Pfeiffer, K. W. West, H. L. Stormer, K. W. Baldwin, J. W. P. Hsu, D. V. Lang, and R. J. Molnar, Appl. Phys. Lett. 77, 2888 (2000).
5. D. Jena, A. C. Gossard, and U. K. Mishra, Appl. Phys. Lett. 76, 1707 (2000).
6. D. Jena and U. K. Mishra, Appl. Phys. Lett. 80, 64 (2002).
7. A. P. Zhang, L. B. Rowland, E. B. Kaminsky, V. Tilak, J. C. Grande, J. Teetsov, A. Vertiatchikh, and L. F. Eastman, J. Electron. Mater. 32, 388 (2003).
8. M. J. Manfra, K. W. Baldwin, A. M. Sergent, K. W. West, R. J. Molnar, and J. Caissie, Appl. Phys. Lett. 85, 5394 (2004).
9. X. Xu, R. P. Vaudo, G. R. Brandes, J. Bai, P. I. Gouma, and M. Dudley, Phys. Status Solidi C 0, 2460 (2003).
10. D. S. Katzer, S. C. Binari, D. F. Storm, J. A. Roussos, B. V. Shanabrook, and E. R. Glaser, Electron. Lett. 38, 1740 (2002).
11. D. F. Storm, D. S. Katzer, S. C. Binari, E. R. Glaser, B. V. Shanabrook, and J. A. Roussos, Appl. Phys. Lett. 81, 3819 (2002).
12. M. J. Manfra, et al., J. Appl. Phys. 92, 338 (2002).
13. J. A. Mittereder, S. C. Binari, P. B. Klein, J. A. Roussos, D. S. Katzer, D. F. Storm, D. D. Koleske, A. E. Wickenden, and R. L. Henry, Appl. Phys. Lett. 83, 1650 (2003).