Effects of hot carrier and irradiation stresses on advanced excimer laser annealed polycrystalline silicon thin film transistors

Microelectronics Reliability

Volumn 44, Issue 9-11 SPEC. ISS., 2004, Pages 1631-1636

  Kouvatsos, D N ^a   Davidovic, V ^b   Papaioannou, G J ^c   Stojadinovic, N ^b   Michalas, L ^c   Exarchos, M ^c   Voutsas, A T ^d   Goustouridis, D ^a  

^a INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY   (Greece)

^b UNIVERSITY OF NI   (Serbia)

^c UNIVERSITY OF ATHENS   (Greece)

^d SHARP LABORATORIES OF AMERICA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYOGENICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEGRADATION; ELECTRON MOBILITY; HOT CARRIERS; IRRADIATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; SILICON; STRESSES; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE;

CHARGE DENSITIES; GAMMA IRRADIATION; IRRADIATION STRESSES; SEQUENTIAL LASER SOLIDIFICATION (SLS);

EXCIMER LASERS;

EID: 4544343899     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.07.082     Document Type: Conference Paper

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