Degradation of ultra-thin oxides with tungsten gates under high voltage: Wear-out and breakdown transient

IEEE International Reliability Physics Symposium Proceedings

Volumn 2004-January, Issue January, 2004, Pages 122-125

  Palumbo, F ^a   Lombardo, S ^a   Stathis, J H ^b   Narayanan, V ^b   McFeely, F R ^b   Yurkas, J J ^b  

^a CNR IMM   (Italy)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

OXIDE FILMS;

DEFECT CONCENTRATIONS; GATE MATERIALS; HIGH VOLTAGE; HIGH-VOLTAGE STRESS; OXIDE BREAKDOWN; ULTRA THIN GATES; ULTRA-THIN OXIDE;

TUNGSTEN;

EID: 84932141532     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2004.1315311     Document Type: Conference Paper

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