DC and microwave properties of 0.5 μm AlGaN/GaN high electron mobility transistors fabricated on 2-inch process line

IEEE International Symposium on Compound Semiconductors, Proceedings

Volumn , Issue , 2000, Pages 351-356

  Hilsenbeck, J ^a   Lenk, F ^a   Lossy, R ^a   Wurfl J ^a   Kohler K ^a   Obloh, H ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; GALLIUM NITRIDE; LITHOGRAPHY; MATHEMATICAL MODELS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

ALUMINUM GALLIUM NITRIDE; MICROWAVE PROPERTIES; PINCH OFF VOLTAGE; SAPPHIRE WAFERS; SATURATION CURRENT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0034425089     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. Microwave semiconductor devices