Impact of metal wet etch on device characteristics and reliability for dual metal gate/high-k CMOS

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2006, Pages 388-391

  Zhang, Zhibo ^b   Hussain, Muhammad Mustafa ^a   Bae, Sang Ho ^a   Song, S C ^a   Lee, Byoung Hun ^c  

^a SEMATECH   (United States)

^b TEXAS INSTRUMENTS   (United States)

^c IBM   (United States)

Author keywords

Carrier mobility; Dual metal gate CMOS; Gate dielectric reliability; High k; Metal wet etch

Indexed keywords

GATE DIELECTRIC RELIABILITY; METAL WET ETCHING; NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI); POSITIVE BIAS TEMPERATURE INSTABILITY (PBTI);

CMOS INTEGRATED CIRCUITS; ELECTRON MOBILITY; HAFNIUM COMPOUNDS; HOLE MOBILITY; TANTALUM COMPOUNDS; WET ETCHING;

GATE DIELECTRICS;

EID: 34250733976     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2006.251250     Document Type: Conference Paper

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